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Datasheet TK11812 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK11812 | DC-DC CONVERTER TK11812
DC-DC CONVERTER FEATURES
s s s s s Miniature Package (SOT-23L) Low Start-up Voltage [0.6 V (typ.)] Few External Components Adjustable Output Voltage (1.5 to 15 V) Wide Input Voltage Range (0.6 to 14 V)
APPLICATIONS
s s s s s s s s Pagers Cassette Recorders Cordless Telephones Portable Instr |  TOKO | converter |
| 2 | TK11812M | DC-DC CONVERTER TK11812
DC-DC CONVERTER FEATURES
s s s s s Miniature Package (SOT-23L) Low Start-up Voltage [0.6 V (typ.)] Few External Components Adjustable Output Voltage (1.5 to 15 V) Wide Input Voltage Range (0.6 to 14 V)
APPLICATIONS
s s s s s s s s Pagers Cassette Recorders Cordless Telephones Portable Instr | TOKO | converter |
| 3 | TK11812MD2 | DC-DC CONVERTER TK11812
DC-DC CONVERTER FEATURES
s s s s s Miniature Package (SOT-23L) Low Start-up Voltage [0.6 V (typ.)] Few External Components Adjustable Output Voltage (1.5 to 15 V) Wide Input Voltage Range (0.6 to 14 V)
APPLICATIONS
s s s s s s s s Pagers Cassette Recorders Cordless Telephones Portable Instr | TOKO | converter |
| 4 | TK11812MTL | DC-DC CONVERTER TK11812
DC-DC CONVERTER FEATURES
s s s s s Miniature Package (SOT-23L) Low Start-up Voltage [0.6 V (typ.)] Few External Components Adjustable Output Voltage (1.5 to 15 V) Wide Input Voltage Range (0.6 to 14 V)
APPLICATIONS
s s s s s s s s Pagers Cassette Recorders Cordless Telephones Portable Instr | TOKO | converter |
TK1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK100A06N1 | MOSFET, Transistor TK100A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0  Toshiba Semiconductor mosfet | | |
| 2 | TK100A08N1 | MOSFET, Transistor TK100A08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 3 | TK100A10N1 | MOSFETs Silicon N-channel MOS TK100A10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0  Toshiba mosfet | | |
| 4 | TK100E06N1 | MOSFET, Transistor TK100E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 5 | TK100E08N1 | MOSFET, Transistor TK100E08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 6 | TK100E10N1 | MOSFET, Transistor TK100E10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 Toshiba Semiconductor mosfet | | |
| 7 | TK100F04K3 | Field Effect Transistor TK100F04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F04K3
Swiching Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm • • • High forward transfer admittance: |Yfs| = 174 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enha Toshiba transistor | |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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