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Datasheet RQK0607AQDQS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RQK0607AQDQSSilicon N-Channel MOS FET

RQK0607AQDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 210 mΩ typ.(at VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
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RQK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RQK0201QGDQASilicon N-Channel MOS FET

RQK0201QGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “QG”. P
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2RQK0202RGDQASilicon N-Channel MOS FET

RQK0202RGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “RG”. P
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3RQK0203SGDQASilicon N-Channel MOS FET

RQK0203SGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “SG”. 1 2
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4RQK0204TGDQASilicon N-Channel MOS FET

RQK0204TGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “TG”. 1 2
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5RQK0301FGDQSSilicon N-Channel MOS FET

RQK0301FGDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID = 3 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “FG”.
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6RQK0302GGDQASilicon N-Channel MOS FET

RQK0302GGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 92 mΩ typ (VGS = 10 V, ID = 1.3 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “GG”. 1 2
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7RQK0302GGDQSSilicon N-Channel MOS FET

RQK0302GGDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 81 mΩ typ (VGS = 10 V, ID = 1.9 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “GG�
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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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