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Datasheet PMGD290UCEA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PMGD290UCEA | 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. F |  NXP Semiconductors | mosfet |
PMG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PMG370XN | N-channel mTrenchMOS extremely low level FET
PMG370XN
N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mount NXP Semiconductors data | | |
| 2 | PMG85XP | MOSFET, Transistor TS SO P6
PMG85XP
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 28 June 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technolo NXP Semiconductors mosfet | | |
| 3 | PMGD130UN | dual N-channel Trench MOSFET PMGD130UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Fe NXP Semiconductors mosfet | | |
| 4 | PMGD175XN | MOSFET, Transistor PMGD175XN
30 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Fe NXP Semiconductors mosfet | | |
| 5 | PMGD280UN | Dual N-channel mTrenchMOS ultra low level FET
PMGD280UN
Dual N-channel µTrenchMOS™ ultra low level FET
MBD128
Rev. 01 — 10 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surfac NXP Semiconductors data | | |
| 6 | PMGD290UCEA | 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. F NXP Semiconductors mosfet | | |
| 7 | PMGD290XN | Dual N-channel mTrenchMOS extremely low level FET
PMGD290XN
Dual N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01 — 26 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Su NXP Semiconductors data | |
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