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Datasheet AGR19045EF Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | AGR19045EF | Transistor AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global syste | TriQuint Semiconductor | transistor |
AGR Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | AGR09030E | Lateral MOSFET AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile commun TriQuint Semiconductor mosfet | | |
2 | AGR09045E | Lateral MOSFET
AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global sys PEAK electronics mosfet | | |
3 | AGR09070EF | Lateral MOSFET AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit
The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF pow TriQuint Semiconductor mosfet | | |
4 | AGR09085E | Lateral MOSFET AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), e TriQuint Semiconductor mosfet | | |
5 | AGR09090EF | Lateral MOSFET AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution ( TriQuint Semiconductor mosfet | | |
6 | AGR09130E | Lateral MOSFET t Copy Only
AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communic TriQuint Semiconductor mosfet | | |
7 | AGR09180EF | Lateral MOSFET AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile com TriQuint Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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