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Datasheet 1N5908 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5908 | TRANSILTM ®
1N5908 SM5908
TRANSILTM
FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W (10/1000µs) REVERSE STAND OFF VOLTAGE : 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V logiccircuit protection(TTL and CMOS technologies) | STMicroelectronics | diode |
2 | 1N5908 | 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
1N5908
1500 Watt Mosorbt Zener Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and f | ON Semiconductor | tvs-diode |
3 | 1N5908 | Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case CB-429 Ammo | New Jersey Semiconductor | diode |
4 | 1N5908 | Unidirectional & Bidirectional Transient Voltage Suppressors SCOTTSDALE DIVISION
1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE400A
Unidirectional & Bidirectional Transient Voltage Suppressors
WWW.Microsemi .COM
DESCRIPTION
APPEARANCE
The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A are JEDEC registered selections for unidirectional dev | Microsemi | tvs-diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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