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PDF AUIRGS30B60K Data sheet ( Hoja de datos )
| Número de pieza | AUIRGS30B60K | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96334
AUTOMOTIVE GRADE AUIRGS30B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE(on) Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE(on) Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free, RoHS Compliant
• Automotive Qualified *
AUIRGSL30B60K
C
G
E
n-channel
VCES = 600V
IC = 50A, TC=100°C
at TJ=175°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
D2Pak
TO-262
AUIRGS30B60K AUIRGSL30B60K
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
78
50
120
120
2500
±20
370
180
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθCS
RθJA
Case-to-Sink, flat, greased surface
dÃÃJunction-to-Ambient (PCB Mount, Steady State)
Wt Weight
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
1.44
Max.
0.41*
–––
40
–––
Units
°C/W
g
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
www.irf.com
1
10/14/10
1 page  
AUIRGS/SL30B60K
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AUIRGS/SL30B60K
TO-262 Part Marking Information
Part Number
IR Logo
AUGSL30B60K
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AUIRGS30B60K.PDF ] | |
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