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Datasheet 1N6263 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6263 | SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), sta |  Digitron Semiconductors | rectifier |
| 2 | 1N6263 | SCHOTTKY BARRIER DIODES 1N5711 and 1N6263
VRRM : 70V , 60V
FEATURES :
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling |  EIC | diode |
| 3 | 1N6263 | 400 mWatt Small Signal Schottky Diode MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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1N6263 1N5711
Features
• Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop
• For |  MCC | diode |
| 4 | 1N6263 | SMALL SIGNAL SCHOTTKY DIODES R
SEMICONDUCTOR
FEATURES
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit |  JINAN JINGHENG ELECTRONICS | diode |
| 5 | 1N6263 | Schottky Diodes VISHAY
Schottky Diodes
1N5711 / 1N6263
Vishay Semiconductors
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer |  Vishay | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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