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Número de pieza | 1SS181 | |
Descripción | SILICON EPITAXIAL PLANAR DIODE | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS181 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Planar Type
1SS181
1SS181
Ultra High Speed Switching Application
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.92V (Typ.)
z Fast reverse recovery time : trr = 1.6ns (Typ.)
z Small total capacitance : CT = 2.2pF (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
VRM
VR
IFM
IO
85
80
300 (*)
100 (*)
V
V
mA
mA
Surge current (10ms)
Power dissipation
IFSM
2 (*)
A
P 150 mW
Junction temperature
Storage temperature
Tj 125 °C
Tstg −55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
1-3G1E
Weight: 0.012g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mAs
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
― ― 0.1
μA
― ― 0.5
― 2.2 4.0 pF
― 1.6 4.0 ns
Marking
Start of commercial production
1982-06
1 2014-03-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS181.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS181 | SILICON EPITAXIAL PLANAR DIODE | Toshiba Semiconductor |
1SS181 | SWITCHING DIODE | JCET |
1SS181 | Ultra High Speed Switching Diode | WILLAS |
1SS181 | High Speed Switching Diodes | MCC |
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