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uPA2755AGR の電気的特性と機能

uPA2755AGRのメーカーはRenesasです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 uPA2755AGR
部品説明 SWITCHING N-CHANNEL POWER MOS FET
メーカ Renesas
ロゴ Renesas ロゴ 




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uPA2755AGR Datasheet, uPA2755AGR PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2755AGR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2755AGR is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Dual chip type
Low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
Low input capacitance
Ciss = 650 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 units) Note2
ID(DC)
ID(pulse)
PT
PT
±8.0 A
±32 A
1.7 W
2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg 55 to +150 °C
IAS 8 A
EAS 6.4 mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19282EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008

1 Page





uPA2755AGR pdf, ピン配列
μ PA2755AGR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
2.4
substrate of
2000 mm2 × 2.2 mm
2 units
2.0
1 unit
1.6
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID( pusl e)
10 ID( DC)
PW = 100 μs
RDS( on ) Limit ed
1 (at VGS = 10 V)
Power Dissipation Limit ed
0.1 M ount ed on ceramic subst rate of
2000 mm2 x 2.2mm, 1unit
TA = 25°C
Single pulse
0.01
0.01 0.1
1
10
1 ms
10 ms
100 ms
DC
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 73.5°C/W
10
1
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
Single pulse, 1 unit
TA = 25°C
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100 1000
Data Sheet G19282EJ1V0DS
3


3Pages


uPA2755AGR 電子部品, 半導体
μ PA2755AGR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
RG = 25 Ω
VDD = 15 V
VGS = 20 0 V
Starting Tch = 25˚C
10 IAS = 8 A
EAS = 6.4 mJ
1
10 μ
100 μ
1m
L - Inductive Load - H
100 m
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120 RG = 25 Ω
VDD = 15 V
100 VGS = 20 0 V
IAS 8 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
ORDERING INFORMATION
PART NUMBER
μ PA2755AGR-E1-AT Note
μ PA2755AGR-E2-AT Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
PACKAGE
Power SOP8
0.08 g TYP.
6 Data Sheet G19282EJ1V0DS

6 Page



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部品番号部品説明メーカ
uPA2755AGR

SWITCHING N-CHANNEL POWER MOS FET

Renesas
Renesas


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