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IRF5852PbF の電気的特性と機能

IRF5852PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5852PbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5852PbF Datasheet, IRF5852PbF PDF,ピン配置, 機能
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
VDSS
20 V
PD - 95261A
IRF5852PbF
HEXFET® Power MOSFET
RDS(on) max (W)
0.090@VGS = 4.5V
0.120@VGS = 2.5V
ID
2.7A
2.2A
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
TSOP-6
B
T! !
B! "
%9
$T
# 9!
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
130
Units
°C/W
1
04/20/10

1 Page





IRF5852PbF pdf, ピン配列
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
IRF5852PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
1
1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 1.50V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 25° C
TJ = 150° C
1
0.1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0 2.5
VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 2.7A
1.5
1.0
0.5
0.0 VGS= 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5852PbF 電子部品, 半導体
IRF5852PbF
0.14 0.30
0.12
0.10
0.08 ID = 2.7A
0.06
2.0
3.0 4.0 5.0 6.0 7.0
VGS, Gate -to -Source Voltage (V)
8.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.20
0.10
VGS = 2.5V
0.00
0
VGS = 4.5V
2 4 6 8 10
ID , Drain Current (A)
12
Fig 12. Typical On-Resistance Vs. Drain
Current
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF5852PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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