|
|
PDF AON6410 Data sheet ( Hoja de datos )
| Número de pieza | AON6410 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AON6410 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
AON6410
30V N-Channel MOSFET
General Description
The AON6410 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This
device is suitable for use as a high side switch in
SMPS and general purpose applications.
Product Summary
VDS (V) = 30V
ID = 24A (VGS = 10V)
RDS(ON) < 12mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current BJ
TC=25°C
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
24
19
120
10
8
30
135
35
14
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
2.6
Max
30
64
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AON6410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
TA=25°C
25
20
15
10
5
0
0.0001
0.001
0.01
0.1
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
30
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=64°C/W
1000
100
TA=25°C
10
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON6410.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AON6410 | N-Channel MOSFET | Alpha & Omega Semiconductors |
| AON6411 | N-Channel MOSFET | Alpha & Omega Semiconductors |
| AON6411 | N-Channel MOSFET |  Freescale |
| AON6414 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |