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PDF AM9945N Data sheet ( Hoja de datos )
| Número de pieza | AM9945N | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | BYD Microelectronics | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
AM9945N
Dual N-Channel MOSFET
General Description
The AM9945N uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for used as DC-DC converters and power
managements in portable and battery-powered products.
Features
• VDS (V) =60V
• Low on-state resistance
RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A)
RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A)
• Fast switching speed
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL LIMIT
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC)a
Drain Current (pulse)b
TA=25℃
TA=70℃
ID(DC)
ID(pulse)
±3.6
±3.1
±25
Contnuous Source Current (Diode
Conduction)a
IS
2
Maximun Power
Dissipationa
Channel Temperature
TA=25℃
TA=70℃
PD
Tch
2.1
1.3
150
UNIT
V
V
A
A
A
W
℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t<=10sec
t<=5sec
RθJA
Maximum
62.5
110
Units
℃/W
℃/W
Note a. Mounted on FR4 Board of 1”x1”.
b. Pulse width limited by maximum junction temperature
Caution: These values must not be exceeded under any conditions.
Ordering Information
z Part Number: AM9945N
z Package:
SOIC8
Datasheet
ES-BYD-WDZCE03D-064 Rev.A/0
Page 1 of 5
1 page  
BYD Microelectronics Co., Ltd.
Package Drawing
D
SOIC8
AM9945N
UNIT (mm)
E
1
E
e
b
L
Dimensions
D
Min. 4.80
Nom. 4.90
Max. 5.00
E
3.80
3.90
4.00
A
1.35
1.55
1.75
E1
5.80
6.00
6.20
A1
0.100
0.175
0.250
C
0.19
0.22
0.25
L
0.500
0.715
0.930
b
0.380
0.445
0.510
e
1.27
BSC
θ
0o
4o
8o
Datasheet
ES-BYD-WDZCE03D-064 Rev.A/0
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM9945N.PDF ] | |
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