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Número de pieza | CSD16401Q5 | |
Descripción | NexFET Power MOSFETs | |
Fabricantes | CICLON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CSD16401Q5 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! N-Channel
CICLON NexFET™ Power MOSFETs
CSD16401Q5
Features
• Ultra Low Qg & Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
• RoHS Compliant
• Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
21
5.2
VGS=4.5V
VGS=10V
1.5
1.8
1.3
V
nC
nC
mΩ
mΩ
V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω
1. Rθja = 400C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. Pulse width ≤300 µs, duty cycle ≤ 2%
RDS(ON) vs. VGS
6.0
5.0
ID = 40A
Gate Charge
12
10
4.0 8
Value
25
+16 / -12
100
38
240
3.1
-55 to 150
500
Units
V
V
A
A
A
W
°C
mJ
3.0
2.0
1.0
0.0
0
TC = 125ºC
TC = 25ºC
2 4 6 8 10
VGS - Gate to Source Voltage (V)
12
6
4
2 VDS = 12.5V
ID = 40A
0
0 10 20 30 40 50 60
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16401Q5
Package
QFN 5X6 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.5
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page N-Channel
CICLON NexFET™ Power MOSFETs
CSD16401Q5
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
1.4
ID = 40A
VGS = 10V
1.2
1.0
100
10 TC = 125ºC
TC = 25ºC
1
0.8 0.1
0.6
0.01
0.4
0.001
0.2
0.0
-75
-25 25
75
TC - Case tem perature (°C)
125
0.0001
175 0
0.2 0.4 0.6 0.8
VSD - Source to Drain Voltage (V)
1
Figure 8: On Resistance vs. Temperature
Figure 9: Typical Diode Forward Voltage
1000
1000
100
10
1
0.1
0.01
0.01
Area limited
by RDS(ON)
Single pulse
RthJA=970C/W (min Cu)
0.1 1
VDS - Drain Voltage (V)
10
100us
1ms
10ms
100ms
1s
DC
100
Figure 10: Maximum Safe Operating Area
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Case Tem perature (oC)
Figure 12: Maximum Drain Current vs. Temperature
© 2008 CICLON Semiconductor Device Corp., rev 2.5
All rights reserved.
100
TC = 25º C
10 TC = 125º C
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tAV - Tim e in Avalanche (S)
1.0E-01
Figure 11: Single Pulse Unclamped Inductive
Switching
www.ciclonsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CSD16401Q5.PDF ] |
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