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PDF Si7368DP Data sheet ( Hoja de datos )
| Número de pieza | Si7368DP | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20-V (D-S) MOSFET
Si7368DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0055 at VGS = 10 V
20
0.0085 at VGS = 4.5 V
ID (A)
20
16
PowerPAK® SO-8
FEATURES
• Halogen-free available
• TrenchFET® Power MOSFET
• Low RDS x Qg Figure of Merit
• Optimized For High Frequency Conversion
APPLICATIONS
• Low-Side MOSFET in Synchronous Buck
• DC/DC Converters in Desktops
• Low Output Voltage Synchronous Rectifier
RoHS
COMPLIANT
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2S
3
G
4
Bottom View
Ordering Information: Si7368DP-T1-E3 (Lead (Pb)-free)
Si7368DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ± 16
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
ID
IDM
IS
20 13
17 10
50
4.1 1.4
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
5
3.2
1.7
1.1
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
20
53
25
70 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.4
4.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72154
S-80438-Rev. D, 03-Mar-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Si7368DP
Vishay Siliconix
0.05 0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72154.
Document Number: 72154
S-80438-Rev. D, 03-Mar-08
www.vishay.com
5
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| PDF Descargar | [ Datasheet Si7368DP.PDF ] | |
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