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Datasheet AP13P15GJ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AP13P15GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP13P15GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-150V 300mΩ -13A
Description
The TO-252 package is unive |  Advanced Power Electronics | mosfet |
| 2 | AP13P15GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP13P15GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-150V 300mΩ -13A
Description
The TO-252 | Advanced Power Electronics | mosfet |
| 3 | AP13P15GJ-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP13P15GH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
-150V 300mΩ -13A
ID
Description
Advanced Power MOSFETs from APEC provide the d | Advanced Power Electronics | mosfet |
AP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AP100-B10 | AC Current transducer AP-B10 AC Current transducer AP-B10
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output.
IPN = 1  LEM data | | |
| 2 | AP100-B420L | AC Current transducer AP-B420L AC Current transducer AP-B420L
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 4-20mA current output.
IPN = 10 .. 400 A
Preliminary
LEM data | | |
| 3 | AP1001BSQ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP1001BSQ
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 6mΩ 15A
Description
The AP1001BSQ used the latest APEC Power MOSFET silicon technology w Advanced Power Electronics mosfet | | |
| 4 | AP1001BSQ-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1001BSQ-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
25V 6mΩ 15A
ID
Description
The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon Advanced Power Electronics mosfet | | |
| 5 | AP1002BMX-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1002BMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 1.8mΩ 32A
ID
Description
The AP1002BMX-3 uses the latest APEC Power MOSFET sili Advanced Power Electronics mosfet | | |
| 6 | AP1003BMP-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1003BMP-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 4.5mΩ 18.4A
ID
Description
The AP1003BMP-3 uses the latest APEC Power MOSFET sil Advanced Power Electronics mosfet | | |
| 7 | AP1003BST | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP1003BST
Preliminary
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4.7mΩ 17.3A
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with t Advanced Power Electronics mosfet | |
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