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PDF AON6908 Data sheet ( Hoja de datos )
| Número de pieza | AON6908 | |
| Descripción | 30V Dual Asymmetric N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON6908
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6908 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is desgined to minimze switching
losses. The Q2 "Low Side" MOSFET is an SRFET™ that
features low RDS(ON) to reduce conduction losses as well
as an integrated Schottky diode with low QRR and Vf to
reduce switching losses. The AON6908 is well suited for
use in compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
46A
<8.9mΩ
<12.5mΩ
Q2
30V
80A
<4.1mΩ
<5.9mΩ
Top View
DFN5X6A
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
46 80
ID 28 62
IDM 100 270
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
11.5
9
27
36
17
13.5
40
80
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
83
33
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1
Max Q1
35
67
4
Max Q2
29
60
1.5
Units
°C/W
°C/W
°C/W
Rev 1: November 2010
www.aosmd.com
Page 1 of 12
1 page  
AON6908
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=150°C
TA=100°C
TA=125°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
50 10000
TA=25°C
40
1000
30 17
100 5
20 2
10
10
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001 0.001
0.1
10 01000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=67°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: November 2010
www.aosmd.com
Page 5 of 12
5 Page 
AON6908
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Q21-C.0EH-A01NNEL: TYPICAL ELECTRICAL AND THERMAL CH0A.7RACTERISTICS
1.0E-02
1.0E-03
1.0E-04
1.0E-05
VDS=30V
VDS=15V
0.6 20A
10A
0.5
0.4 5A
0.3 IS=1A
0.2
1.0E-06
0 50 100 150 200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
38
di/dt=800A/µs
36
34
32 Qrr
30
28 Irm
125ºC
25ºC
125ºC
25ºC
14
12
10
8
6
4
2
26
0
0
5 10 15 20 25 30
IS (A)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
35
30 Is=20A
25
20
15 Qrr
10
5 Irm
125ºC
25ºC
125ºC
25ºC
10
8
6
4
2
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0.1
0 50 100 150 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
16
14 di/dt=800A/µs
12 trr
10
125ºC
25ºC
3
2.5
2
8 1.5
6
4S
2
125ºC
25ºC
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
24 2.5
Is=20A
21
2
18
125ºC
15 1.5
12 trr
25ºC
9 125º
1
6
25ºC
3
S
0.5
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: November 2010
www.aosmd.com
Page 11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AON6908.PDF ] | |
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