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Datasheet SKBPC3516 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SKBPC3516 | SILICON/GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Suntan Su
®
®
SKBPC35005 THRU SKBPC3516
SILICON/GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS
Voltage Range 50 to 1600 Volts
FEATU R E S
◆Diffused Junction ◆Low Forward Voltage Drop ◆High Current Capability ◆High Reliability ◆High Surge Current Capability ◆Ideal for Printed Circuit |  Suntan | rectifier |
| 2 | SKBPC3516 | Bridge Rectifier SKBPC3504 THRU SKBPC3516 桥式整流器 Bridge Rectifier
■特征 Features
● ● ●
■外形尺寸和印记
Outline Dimensions and Mark
Io VRRM
35A 400V~1600V
SKBPC
1.134(28.8) 1.110(28.2) .980(24.9) .941(23.9)
Hole for #10 Screw
玻璃钝化芯片 Glass passivated chip 耐正向浪涌� |  Yangzhou Yangjie | rectifier |
| 3 | SKBPC3516 | THREE-PHASE SILICON BRIDGES Production specification
THREE-PHASE SILICON BRIDGES FEATURES
z z z z Rating to 1600V PRV Surge overload rating to 500 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 meth |  Galaxy Microelectronics | data |
| 4 | SKBPC3516 | Three-phase bridge rectifier 浙江赛菱电子有限公司 ZHEJIANG SAILING ELECTRON CO.,LTD.
产品规格书
Specification of Products
产品名称：三相桥式整流器 产品型号：SKBPC3510 3512 3516
浙 江 赛 菱 电 子 有 限 公司
ZHEJIANG SAILING ELECTRON CO.,LTD.
厂址：浙江省 缙云县 五东工业� |  ZHEJIANG SAILING | rectifier |
| 5 | SKBPC3516 | (SKBPC3512 / SKBPC3516) Three-phase bridge rectifier 浙江赛菱电子有限公司 ZHEJIANG SAILING ELECTRON CO.,LTD.
产品规格书
Specification of Products
产品名称：三相桥式整流器 产品型号：SKBPC3512 3516
浙 江 赛 菱 电 子 有 限 公司
ZHEJIANG SAILING ELECTRON CO.,LTD.
厂址：浙江省 缙云县 五东工业区 � | ZHEJIANG SAILING | rectifier |
SKB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SKB02N120 | IGBT, Insulated Gate Bipolar Transistor SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Allowed number of short circuits: <1000; time between short circuits: >1s.
lower Eoff compared to previous generation Short circuit withstand time – 10 s Designed for frequency in  Infineon Technologies AG igbt | | |
| 2 | SKB02N60 | Fast IGBT SKP02N60 SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600  Infineon Technologies igbt | | |
| 3 | SKB04N60 | Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode SKP04N60 SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600 Infineon Technologies AG igbt | | |
| 4 | SKB06N60 | Fast IGBT in NPT-technology
SKP06N60,
SKB06N60 SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G Infineon Technologies igbt | | |
| 5 | SKB1.2xx | Miniature Bridge Rectifiers Semikron rectifier | | |
| 6 | SKB1.5xx | Miniature Bridge Rectifiers Semikron rectifier | | |
| 7 | SKB101 | Miniature Bridge Rectifiers Semikron International rectifier | |
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