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PDF APT150GN60B2 Data sheet ( Hoja de datos )
| Número de pieza | APT150GN60B2 | |
| Descripción | IGBT | |
| Fabricantes | Microsemi | |
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TYPICAL PERFORMANCE CURVES
APT16500G0NV60B2(G)
APT150GN60B2(G)
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
C
G
E
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT150GN60J
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C 1
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 2
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 2400μA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 3
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
MIN
600
5.0
1.05
TYP
5.8
1.45
1.65
2
MAX
6.5
1.85
25
1000
600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
TYPICAL PERFORMANCE CURVES
20,000
10,000
Cies
500
100
50
Coes
Cres
10 0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT150GN60B2(G)
500
400
300
200
100
0 0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
0.20
D = 0.9
0.7
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50
Junction
temp. (°C)
Power
(watts)
RC MODEL
0.0964
0.184
0.00770
0.300
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
F
max
=
min
(fmax,
f
max2)
0.05
5 fmax1 = t d(on) + tr + td(off) + tf
TJ =
TC =
125°C
75°C
D = 50 %
VCE = 400V
1 RG = 1.0Ω
30 50 70
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
90 110 130 150 170 190
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Free Datasheet http://www.datasheet4u.com/
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