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PDF AON6908A Data sheet ( Hoja de datos )
| Número de pieza | AON6908A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6908A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6908A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1 "High
Side" MOSFET is desgined to minimze switching losses.
The Q2 "Low Side" MOSFET is an SRFET™ that features
low RDS(ON) to reduce conduction losses as well as an
integrated Schottky diode with low QRR and Vf to reduce
switching losses. The AON6908A is well suited for use in
compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
46A
<8.9mΩ
<12.5mΩ
Q2
30V
80A
<3.6mΩ
<4.5mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
BoBtotottmomViVeiwew
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±12
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
46 80
ID 28 62
IDM 100 200
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
11.5
9
27
36
17
13.5
40
80
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
78
31
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1.2
Max Q1
35
67
4
Max Q2
29
60
1.6
Units
°C/W
°C/W
°C/W
Rev0 : Sep 2010
www.aosmd.com
Page 1 of 11
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=25°C
TA=150°C
TA=100°C
TA=125°C
10.0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
50 10000
40
1000
TA=25°C
30 17
100 5
20 2
10
10
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001 0.001
0.1
10 1000
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=67°C/W
40
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Sep 2010
www.aosmd.com
Page 5 of 11
Free Datasheet http://www.datasheet4u.com/
5 Page 
AON6908A
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 0 : Sep 2010
www.aosmd.com
Page 11 of 11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AON6908A.PDF ] | |
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