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PDF IXTA60N20T Data sheet ( Hoja de datos )
| Número de pieza | IXTA60N20T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchTM
Power MOSFET
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
IXTA60N20T
IXTP60N20T
IXTQ60N20T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
Maximum Ratings
200
200
V
V
±20 V
±30 V
60 A
150 A
30 A
700 mJ
500 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
5.5 g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
3.0 5.0 V
±200 nA
1 μA
250 μA
32 40 mΩ
VDSS = 200V
ID25 = 60A
RDS(on) ≤ 40mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-3P (IXTQ)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z High Current Handling Capability
z 175°C Operating Temperature
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99359B(7/10)
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTA60N20T.PDF ] | |
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