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Datasheet 2N5197 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N5197 | Monolithic N-Channel JFET Dual Siliconix
2N5196/5197/5198/5199
Monolithic NĆChannel JFET Duals
Product Summary
Part Number
2N5196 2N5197 2N5198 2N5199
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS)
-0.7 to -4
-50
1
-0.7 to -4
-50
1
-0.7 to -4
-50
1
-0.7 to -4
-50
1
IG Max (pA) -15 -15 -15 -15
jVGS1 - VGS2j Max (mV | TEMIC | data |
2 | 2N5197 | N-Channel Dual Silicon Junction Field-Effect Transistor 8/2014
2N5196, 2N5197, 2N5198, 2N5199
N-Channel Dual Silicon Junction Field-Effect Transistor
∙ Differencial Inputs
At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (p | InterFET | transistor |
3 | 2N5197 | Monolithic N-Channel JFET Duals 2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196 2N5197 2N5198 2N5199
VGS(off) (V)
–0.7 to –4 –0.7 to –4 –0.7 to –4 –0.7 to –4
V(BR)GSS Min (V)
–50 –50 –50 –50
gfs Min (mS)
1 1 1 1
IG Max (pA)
–15 –15 –15 � | Vishay Siliconix | data |
4 | 2N5197 | (2N5xxx) JFET N-Channel Metal Can JFET’s
Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S &
2N5432 2N5433 2N5434 25
4.0 3.0 1.0
10.0
Part No.
w
w
2N3684 2N3686 2N3822
w
.D
BV GSS Min. (V) 50 50 50 40 35 30 30 30 25
at
h S a
(V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
ee
9.0 4.0
U 4 t
5 5 5 VP @
.c | Taitron Components | data |
5 | 2N5197 | Trans JFET N-CH 6-Pin TO-71 | New Jersey Semiconductor | data |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32 SSDI transistor | | |
4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown Semicoa Semiconductor data | | |
7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T Microsemi Corporation transistor | |
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