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PDF MJ3773 Data sheet ( Hoja de datos )
| Número de pieza | MJ3773 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ3773
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
Vce(sat)=0.8V(Max)@Ic=10A
·Low Leakage -
Icbo=1mA(max)@140V
·High Current-Gain-Bandwidth Product-
fT=1MHz(min)@Ic=1A
APPLICATIONS
·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design
requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160 V
VCBO Collector-Base Voltage
60 V
VEBO Emitter-Base Voltage
7V
IC Collector Current-Continuous
16 A
IBB Base Current-Continuous
4A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJ3773.PDF ] | |
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