|
|
Datasheet BB178 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BB178 | VHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB178 VHF variable capacitance diode
Product specification 1997 Nov 13
Philips Semiconductors
Product specification
VHF variable capacitance diode
FEATURES • Excellent linearity • Excellent matching to 2% DMA • Ultra small plastic SMD package � | Philipss | diode |
2 | BB178 | VHF variable capacitance diode | Leshan Radio Company | diode |
3 | BB178 | VHF VARIABLE CAPACITANCE DIODE UNISONIC TECHNOLOGIES CO., LTD BB178
Preliminary DIODE
VHF VARIABLE CAPACITANCE DIODE
DESCRIPTION
2 1 SOD-523
The UTC BB178 is a planar technology variable capacitance diode providing the designers excellent matching performance, ultra-low series resistance and great linearity. The UTC BB178 is | Unisonic Technologies | diode |
4 | BB178LX | VHF variable capacitance diode BB178LX
VHF variable capacitance diode
Rev. 02 — 12 February 2009
Product data sheet
1. Product profile
1.1 General description
The BB178LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package. The excellent matching performance is achieved by | NXP Semiconductors | diode |
BB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-505 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
2 | BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
3 | BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
4 | BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
5 | BB105 | Silicon Planar Signal Diodes Iskra Semic diode | | |
6 | BB105A | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | | |
7 | BB105B | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | |
Esta página es del resultado de búsqueda del BB178. Si pulsa el resultado de búsqueda de BB178 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |