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Datasheet PJESDZ6V8-2G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PJESDZ6V8-2G | E.S.D. Dual Protection Diode Array PJESDZ6V8-2G
E.S.D. Dual Protection Diode Array
This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to 2 data lines in a unidir | Pan Jit International | diode |
PJE Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PJE138L | 60V N-Channel Enhancement Mode MOSFET PPJE138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4.2Ω RDS(ON) , [email protected], ID@100mA<5Ω RDS(ON) , [email protected], ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Pan Jit International mosfet | | |
2 | PJE5V0M1FN2 | Low Capacitance TVS/ESD Protection PPJE5V0M1FN2
Low Capacitance TVS/ESD Protection
VRWM
5V
Features
Bidirectional ESD protection of one line IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance IEC61000-4-4(EFT): 20A(5/50nS) IEC61000-4-5(Lightning): 2A(8/20S) Low leakage current, maximum of 0.5A at r Pan Jit International data | | |
3 | PJE5V0U8TB6 | Low Capacitance ESD Protection PPJE5V0U8TB6
Low Capacitance ESD Protection
VRWM
5V
Features
IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Compliance IEC61000-4-4(EFT): 40A(5/50nS) IEC61000-4-5(Lightning): 5A(8/20S) Low leakage current, maximum 0.1A at rated voltage Lead free in compliance with EU Ro Pan Jit International data | | |
4 | PJE8400 | 20V N-Channel Enhancement Mode MOSFET PPJE8400
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
1.1A
Features
RDS(ON) , [email protected], [email protected]<88mΩ RDS(ON) , [email protected], [email protected]<100mΩ RDS(ON) , [email protected], [email protected]<130mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Applicati Pan Jit International mosfet | | |
5 | PJE8401 | 20V P-Channel Enhancement Mode MOSFET PPJE8401
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-0.9A
Features
RDS(ON) , [email protected], [email protected]<130mΩ RDS(ON) , [email protected], [email protected]<160mΩ RDS(ON) , [email protected], [email protected]<210mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM A Pan Jit International mosfet | | |
6 | PJE8403 | 20V P-Channel Enhancement Mode MOSFET PPJE8403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.6A
SOT-523
Features
RDS(ON) , [email protected], [email protected]<340mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi Pan Jit International mosfet | | |
7 | PJE8404 | 30V N-Channel Enhancement Mode MOSFET PPJE8404
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
0.6A
SOT-523
Features
RDS(ON) , VGS@4,5V, [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<290mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Designed fo Pan Jit International mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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