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PDF LMH2120 Data sheet ( Hoja de datos )
| Número de pieza | LMH2120 | |
| Descripción | 6 GHz Linear RMS Power Detector | |
| Fabricantes | National Semiconductor Corporation | |
| Logotipo |  |
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DataSheet.in
LMH2120
July 20, 2010
6 GHz Linear RMS Power Detector with 40 dB Dynamic
Range
General Description
The LMH2120 is a 40 dB Linear RMS power detector partic-
ularly suited for accurate power measurement of modulated
RF signals that exhibit large peak-to-average ratios, i.e, large
variations of the signal envelope. Such signals are encoun-
tered in W-CDMA and LTE cell phones. The RMS measure-
ment topology inherently ensures a modulation insensitive
measurement.
The device has an RF frequency range from 50 MHz to
6 GHz. It provides an accurate, temperature and supply in-
sensitive, output voltage that relates linearly to the RF input
power in volt. The LMH2120's excellent conformance to a lin-
ear response enables an easy integration by using slope and
intercept only, reducing calibration effort significantly. The
device operates with a single supply from 2.7V to 5V. The
LMH2120 has an RF power detection range from -35 dBm to
5 dBm and is ideally suited for use in combination with a di-
rectional coupler. Alternatively, a resistive divider can be
used.
The device is active for EN = High, otherwise it is in a low
power consumption shutdown mode. To save power and pre-
vent discharge of an external filter capacitance, the output
(OUT) is high impedance during shutdown.
The LMH2120 power detector is offered in a tiny 6-bump
micro SMD package.
Features
■ Linear root mean square response
■ 40 dB linear-in-V power detection range
■ Multi-band operation from 50 MHz to 6 GHz
■ Lin conformance better than ±0.5 dB
■ Highly temperature insensitive
■ Modulation independent response
■ Minimal Slope and Intercept variation
■ Shutdown functionality
■ Wide supply range from 2.7V to 5V
■ Tiny 6-bump micro SMD package
Applications
■ Multi Mode, Multi band RF power control
— GSM/EDGE
— CDMA/CDMA2000
— W-CDMA
— OFDMA
— LTE
■ Infrastructure RF Power Control
Typical Application
Output Voltage vs. RF Input Power at 1900 MHz
30055701
© 2010 National Semiconductor Corporation 300557
30055733
www.national.com
1 page  
DataSheet.in
Symbol
Parameter
DR Dynamic Range for specified
Accuracy
Condition
±1 dB Lin Conformance Error (ELC)
±3 dB Lin Conformance Error (ELC)
±0.5 dB Variation over Temperature
(EVOT)
Min
(Note 5)
Typ
(Note 6)
33
30
42
40
Max
(Note 5)
35
Units
dB
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, applicable std. MIL-STD-883, Method 3015.7. Machine model, applicable std. JESD22–A115–A (ESD MM std of JEDEC). Field-
Induced Charge-Device Model, applicable std. JESD22–C101–C. (ESD FICDM std. of JEDEC)
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
TJ > TA.
Note 5: All limits are guaranteed by test or statistical analysis.
Note 6: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 7: Limits are guaranteed by design and measurements which are performed on a limited number of samples.
Note 8: This parameter is guaranteed by design and/or characterization and is not tested in production.
5 www.national.com
5 Page 
DataSheet.in
Output Voltage vs. RF Input Power at 900 MHz
Lin Conformance vs. RF Input Power at 900 MHz
30055724
Lin Conformance (50 units) vs.
RF Input Power at 900 MHz
30055725
Temperature Variation vs. RF Input Power at 900 MHz
30055726
Temperature Variation (50 units) vs.
RF Input Power at 900 MHz
30055727
1 dB Power Step Error vs.
RF Input Power at 900 MHz
30055728
11
30055729
www.national.com
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| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet LMH2120.PDF ] | |
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