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Número de pieza | NTMFS4701N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMFS4701N
Power MOSFET
30 V, 20 A, Single N−Channel,
SO−8 Flat Lead Package
Features
• Thermally and Electrically Enhanced Packaging Compatible with
Standard SO−8
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
• Optimized for High Side Control Applications
• High Speed Switching Capability
• This is a Pb−Free Device
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1 )
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 70°C
t v10 s TA = 25°C
Steady
State
TA = 25°C
VDSS
VGS
ID
ID
PD
30
$20
12.3
9.8
20
2.3
V
V
A
W
t v10 s TA = 25°C
Continuous Drain Current
(Note 2)
Power Dissipation (Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature
PD
ID
PD
IDM
TJ, Tstg
6.0
7.7
6.2
0.9
60
−55 to
150
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 V, VGS = 10 V, IPK = 7.5 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IS
EAS
TL
6.0 A
280 mJ
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area 1.127 in sq. [1 oz} including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq.).
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V(BR)DSS
30 V
RDS(on) TYP
6.0 mW @ 10 V
8.0 mW @ 4.5 V
ID MAX
20 A
D
G
S
1
SO−8 FLAT LEAD
CASE 488AA
MARKING
DIAGRAM
D
S
S 4701N
S AYWW
G
D
D
D
4701N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4701NT1G SO−8 FL 1500 Tape & Reel
(Pb−Free)
NTMFS4701NT3G SO−8 FL 5000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 0
1
Publication Order Number:
NTMFS4701N/D
1 page NTMFS4701N
PACKAGE DIMENSIONS
SO−8 FLAT LEAD
CASE 488AA−01
ISSUE A
D
2
D1
6
2X
0.20 C
A
B 2X
5 0.20 C
E1
2E
1 2 34
TOP VIEW
c
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
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NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.90 0.99 1.20
A1 0.00 −−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.15 BSC
D1 4.50 4.90 5.10
D2 3.50 −−− 4.22
E 6.15 BSC
E1 5.50 5.80 6.10
E2 3.45 −−− 4.30
e 1.27 BSC
G 0.51 0.61 0.71
K 0.51 −−− −−−
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
q 0 _ −−− 12 _
6X b
0.10 C A B
0.05 c L
1
e/2
4
K
E2
65
G D2
BOTTOM VIEW
L1
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Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMFS4701N.PDF ] |
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NTMFS4701N | Power MOSFET ( Transistor ) | ON Semiconductor |
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