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PDF NTMFS4839N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4839N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4839N
Power MOSFET
30 V, 66 A, Single N−Channel, SO−8FL
Features
• Low RDS(ON) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
www.DataSheet4U.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
15 A
TA = 85°C
11
Power Dissipation
RqJA (Note 1)
TA = 25°C PD 2.17 W
Continuous Drain
TA = 25°C
ID
9.5 A
Current RqJA
(Note 2)
Steady TA = 85°C
7.0
State
Power Dissipation
TA = 25°C PD 0.87 W
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
TC = 85°C
ID
66 A
48
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
41.7 W
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
IDM 132 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
35 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
180.5 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.5 mW @ 10 V
9.5 mW @ 4.5 V
ID MAX
66 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4839N
S AYWWG
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4839NT1G
Package
SO−8FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4839NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
NTMFS4839N/D
1 page  
NTMFS4839N
1000
100
VDS = 15 V
ID = 30 A
VGS = 11.5 V
td(off)
10
tf
tr
td(on)
1
1 10
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
www.DataSheet4U.comVariation versus Gate Resistance
100
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
1000
100
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
100 ms
10
1 ms
1
0.1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
200
190
180
ID = 19 A
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
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