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PDF AUIRF1010ZL Data sheet ( Hoja de datos )
| Número de pieza | AUIRF1010ZL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97458
AUIRF1010Z
AUIRF1010ZS
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to
Tjmax
AUIRF1010ZL
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
55V
7.5mΩ
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
G
ID (Silicon Limited)
94A
S ID (Package Limited)
75A
www.DataSShpeeect4ifUic.aclolymdesigned for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
D
D
D
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
DS
G
TO-220AB
AUIRF1010Z
DS
G
D2Pak
AUIRF1010ZS
DS
G
TO-262
AUIRF1010ZL
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
Max.
94
66
75
360
140
0.90
± 20
130
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
1 page  
5000
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
www.DataSheet4U.com
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
AUIRF1010Z/S/L
20
ID= 75A
16
VDS= 44V
VDS= 28V
12
8
4
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page 
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRF1010Z/S/L
www.DataSheet4U.com
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRF1010ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AUIRF1010ZL.PDF ] | |
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