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PDF AO4916A Data sheet ( Hoja de datos )
| Número de pieza | AO4916A | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4916A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4916A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4916A is Pb-free (meets ROHS &
www.DaStaoSnhye2e5t94Us.pceocmifications). AO4916AL is a Green Product
ordering option. AO4916A and AO4916AL are
electrically identical.
Features
Q1 Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V)
RDS(ON) < 17mΩ
<17mΩ (VGS = 10V)
RDS(ON) < 27mΩ
<27mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D2
D2
G1
S1/A
1 8 G2
2 7 D1/S2/K
3 6 D1/S2/K
4 5 D1/S2/K
SOIC8
Q1
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
D1
K
A
G2
S1
D2 Q2
S2
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Diode Forward Current B
Power Dissipation A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
IF
IFM
PD
TJ, TSTG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4916A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
8 ID=8.5A
6
4
2
0
0 5 10 15
Qg (nC)
Figure 7: Gate-Charge Characteristics
www.DataSheet4U.com
20
1600
1400
1200
f=1MHz
Ciss VGS=0V
1000
800
600 Coss FET+SCHOTTKY
400
200
0 Crss
0
5
10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TJ(Max)=150°C, TA=25°C
10.0
RDS(ON)
limited
1ms
10ms
10µs
100µs
1.0
0.1
0.1
0.1s
1s
10s
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
1
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4916A.PDF ] | |
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