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Número de pieza | AO4900 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4900 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AO4900
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
www.DaetaffSichieeentc4yU.fcuormther. Standard Product AO4900 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
K
A
G1
MOSFET
30
±12
6.9
5.8
40
2
1.44
-55 to 150
D1
S1
Schottky
30
3
2
40
2
1.44
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
47.5
71
32
Max
62.5
110
40
62.5
110
40
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page AO4900
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF (Volts)
Figure 12: Schottky Forward Characteristics
www.DataSheet4U.com
0.7
0.6 IF=3A
0.5
0.4
IF=1A
0.3
0.2
0.1
0
25 50 75 100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
175
250
f = 1MHz
200
150
100
50
0
0 5 10 15 20 25 30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
100
10
1
VR=30V
0.1
0.01
0.001
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=62.5°C/W
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AO4900.PDF ] |
Número de pieza | Descripción | Fabricantes |
AO4900 | Dual N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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