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PDF APT50GN60SG Data sheet ( Hoja de datos )
| Número de pieza | APT50GN60SG | |
| Descripción | Resonant Mode Combi IGBT | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
APT50GN60B APAT5P0TG5N06G0BN_6S0(GS)
APT50GN60B(G) APT50GN60S(G)
www.DataSheet46U0.c0oVm
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
(B)
TO-247
G
C
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT50GN60B(G)
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
107
64
150
150A @ 600V
366
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.05 1.45 1.85
1.7
25
TBD
600
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com
1 page  
TYPICAL PERFORMANCE CURVES
5,000
Cies
1,000
500
100
50
C0es
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT50GN60B_S(G)
160
140 www.DataSheet4U.com
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.45
0.40
0.35
0.30
D = 0.9
0.7
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
110
50
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
TJ = 125°C
10 TC = 75°C
fmax2 =
Pdiss - P cond
E on2 + E off
D = 50 %
VCE = 400V
6 RG = 4.3Ω
Pdiss =
TJ - T C
R θJC
10 20 30 40 50 60 70 80
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT50GN60SG.PDF ] | |
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