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PDF AOP804 Data sheet ( Hoja de datos )
| Número de pieza | AOP804 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOP804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP804 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP804 is Pb-free
(meets ROHS & Sony 259 specifications). AOP804L
is a Green Product ordering option. AOP804 and
AOP804L are electrically identical.
Features
VDS (V) = 60V
ID = 4.7A (VGS = 10V)
RDS(ON) < 55mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
4.7
3.8
20
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
37
74
28
Max
50
90
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AOP804.PDF ] | |
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