DataSheet.es    


PDF 2SK3582TK Data sheet ( Hoja de datos )

Número de pieza 2SK3582TK
Descripción Field Effect Transistor Silicon N Channel Junction Type
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SK3582TK (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! 2SK3582TK Hoja de datos, Descripción, Manual

2SK3582TK
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TK
Application for Ultra-compact ECM
Unit: mm
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
VGDO
IG
PD
Tj
Tstg
-20
10
100
125
55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank
80 to 200 µA
B-Rank 170 to 300µA
1
3
2
TESM3
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
www.DataSheet4U.com
Marking
5
Type Name
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Equivalent Circuit
D
G
S
1 2007-11-01

1 page




2SK3582TK pdf
2SK3582TK
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
www.DataSheHeat4nUd.bcooomk” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5 2007-11-01

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet 2SK3582TK.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SK3582TKField Effect Transistor Silicon N Channel Junction TypeToshiba Semiconductor
Toshiba Semiconductor
2SK3582TVSilicon N Channel Junction TypeToshiba Semiconductor
Toshiba Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar