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PDF APT60GT60JRDQ3 Data sheet ( Hoja de datos )
| Número de pieza | APT60GT60JRDQ3 | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
®
APT6600G0TV60JRDQ3
APT60GT60JRDQ3
Thunderbolt IGBT®
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 100KHz
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT60GT60JRDQ3
UNIT
VCES Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2 Continuous Collector Current @ TC = 110°C
ICM Pulsed Collector Current 1
SSOA Switching Safe Operating Area @ TJ = 150°C
www.DatTaSJ,PhTeDSeTtG4U.coTOmoptearlaPtionwgearnDdisSstiopraatgioenJunction Temperature Range
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
105
48
360
360A @ 600V
379
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 330µA)
Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 60A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 60A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
600
3 4 5 Volts
2.0 2.5
2.8
330
2500
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
5,000
Cies
1,000
500
Coes
Cres
100 0
10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT60GT60JRDQ3
400
350
300
250
200
150
100
50
0 0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.35
0.30
D = 0.9
0.25
0.20
0.15
0.10
0.05
0
10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
www.DataSheet4U.com
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
0.136
0.0078
0.151
0.285
0.0434
4.38
ZimEpXTedaarencthees:eCxtaesrenatol tshienrkm, al
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
120
50
Fmax = min (fmax, fmax2)
10
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
5
TTDJC===50172%55°°CC
1 VRCGE==4.430Ω0V
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10 20 30 40 50 60 70 80 90
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT60GT60JRDQ3.PDF ] | |
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