|
|
Datasheet GL5401 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GL5401 | PNP EPITAXIAL PLANAR TRANSISTOR
GL5401
Description Package Dimensions
1/2 PNP E PITAX I AL PL ANAR T RANSI STOR
The GL5401 is designer for general purpose applications requiring high breakdown voltages.
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35
REF. B J 1 | GTM CORPORATION | transistor |
GL5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GL513 | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
2 | GL513F | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
3 | GL514 | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
4 | GL527 | 5MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE Sharp Electrionic Components diode | | |
5 | GL528 | 5MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE Sharp Electrionic Components diode | | |
6 | GL533 | High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing) GL533
GL533
s Features
1. Small spot light diameter for easy beam diaphragming (TYP. : φ 0.6 mm) 2. High positional accuracy of optical axis (accuracy : ± 0.1 mm) 3. High output type (radiant flux Φ e : TYP. 13mW) 4. Low peak forward voltage type (peak forward voltage V FM : TYP. 2.0V) 5. PSD* E Sharp Electrionic Components diode | | |
7 | GL537 | 5mm Resin Mold Type Infrared Emitting Diode GL537/GL538
GL537/GL538
s Features
1. High output power I E : TYP. 30mW/sr at I F = 50mA (GL538 ) 2. Beam angle GL538 ∆θ : TYP. ± 13˚ GL537 ∆θ : TYP. ± 25˚ 3. φ 5mm epoxy resin package
φ 5mm Resin Mold Type Infrared Emitting Diode
s Outline Dimensions
MAX.
( Unit : mm )
φ 5
Blue tr Sharp Electrionic Components diode | |
Esta página es del resultado de búsqueda del GL5401. Si pulsa el resultado de búsqueda de GL5401 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |