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PDF AOT430 Data sheet ( Hoja de datos )
| Número de pieza | AOT430 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT430
www.datasNhe-eCt4uh.caomnnel Enhancement Mode Field Effect Transistor
General Description
The AOT430 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT430 is Pb-free (meets ROHS & Sony
259 specifications).
Features
VDS (V) = 75V
ID = 80 A
(VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
UIS TESTED!
TO-220
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
VGS
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
75
±25
80
78
200
45
300
268
134
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
45
0.45
Max
60
0.56
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
www.datasheet4u.com
60
40
300
250
200
150
100
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Current De-rating (Note B)
50
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOT430.PDF ] | |
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