PDF APT13GP120B Data sheet ( Hoja de datos )

Número de pieza	APT13GP120B
Descripción	POWER MOS 7 IGBT
Fabricantes	Advanced Power Technology
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No Preview Available ! TYPICAL PERFORMANCE CURVES ® 1200V APT13GP120B_S(G) APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7® IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge www.DataShee•t4UUl.tcroamfast Tail Current shutoff • 100 kHz operation @ 600V, 10A • 50 kHz operation @ 600V, 16A • RBSOA Rated B TO-247 GC E D3PAK S C GE C G E MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise speciﬁed. APT13GP120B_S(G) UNIT VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 1200 ±30 41 20 50 50A @ 960V 250 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) I CES I GES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MIN TYP MAX Units 1200 3 4.5 6 Volts 3.3 3.9 3.0 500 3000 µA ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 1 page TYPICAL PERFORMANCE CURVES 3,000 1,000 500 Cies 100 Coes 50 10 Cres 1 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage www.DataSheet4U.com 0.60 APT13GP120B_S(G) 60 50 40 30 20 10 0 0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.50 0.40 0.30 0.20 0.10 0 10-5 0.9 0.7 0.5 Note: 0.3 0.1 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 Junction temp. (°C) Power (watts) Case temperature. (°C) RC MODEL 0.216 0.284 0.006F 0.161F FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 181 100 50 Fmax = min (fmax, fmax2) fmax1 = td(on) + 0.05 tr + td(off) + tf TTDJC===50172%55°°CC 10 VRCGE==5ΩXXXV 5 10 15 20 25 fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 30 Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current 5 Page

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Número de pieza	Descripción	Fabricantes
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