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PDF AP4501SD Data sheet ( Hoja de datos )
| Número de pieza | AP4501SD | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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AP4501SD
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
27mΩ
7A
-30V
49mΩ
-5A
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
7 -5
5.8 -4.2
40 -30
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200221031
1 page  
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N-Channel
8
6
4
2
0
25 50 75 100 125 150
T c , Case Temperature ( oC)
Fig 5. Maximum Drain Current v.s.
Case Temperature
AP4501SD
2.4
1.8
1.2
0.6
0
0 50 100
T c ,Case Temperature ( oC)
150
Fig 6. Typical Power Dissipation
100
100us
10
1ms
1
0.1
T C =25 oC
Single Pulse
0.01
0.1
1 10
V DS (V)
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
10 100 1000
Fig 8. Effective Transient Thermal Impedance
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P-Channel
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5 x RATED VDS
-10 V
S
VGS
VDS
90%
10%
VGS
td(on) tr
AP4501SD
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
D
G
S
-1~-3mA
I
G
VDS
VGS
I
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AP4501SD.PDF ] | |
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