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PDF 2SJ602 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ602 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ602
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ602 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A)
RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A)
• Low input capacitance:
Ciss = 1300 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 20
m 50
Total Power Dissipation (TC = 25°C) PT 40
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS −20
EAS 40
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ602
TO-220AB
2SJ602-S
TO-262
2SJ602-ZJ
2SJ602-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14647EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
Pulsed
120 VGS = –4.0 V
–4.5 V
–10 V
80
40
ID = –10 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
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100
Coss
Crss
10
–0.1
–1 –10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Drain Current - A
2SJ602
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
VGS = –10 V
–10
–4.0 V
0V
–1
–0.1
–0.01
0
–0.5 –1.0
VSD - Source to Drain Voltage - V
–1.5
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
10 td(on)
tr
tf
1
–0.1 –1 –10 –100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60 ID = –20 A –12
–50
VDD = –48 V
–40
–30 V
–12 V
–10
–8
–30 VGS
–6
–20
–10
0
0
VDS
5 10 15 20 25
QG - Gate Charge - nC
–4
–2
0
30
Data Sheet D14647EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ602.PDF ] | |
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