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PDF AO6403 Data sheet ( Hoja de datos )
| Número de pieza | AO6403 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO6403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6403 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. It may be used in
common-drain configuration to form a bidirectional
blocking switch. AO6403 is Pb-free (meets ROHS &
Sony 259 specifications). AO6403L is a Green
Product ordering option. AO6403 and AO6403L are
electrically identical.
www.DataSheet4U.com
TSOP6
Top View
D 16 D
D 25 D
G 34 S
Features
VDS (V) = -30V
ID = -6 A (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -10V)
RDS(ON) < 58mΩ (VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO6403.PDF ] | |
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