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Número de pieza | AO4816 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4816 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO4816
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4816 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
dual device is suitable for use as a load switch or in
PWM applications. Standard Product AO4816 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4816L is a Green Product ordering option.
AO4816 and AO4816L are electrically identical.
Features
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ (VGS = 20V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 46mΩ (VGS = 4.5V)
www.DataSheet4U.com
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±25
8.5
6.5
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
33
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO4816.PDF ] |
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