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PDF AOD603 Data sheet ( Hoja de datos )
| Número de pieza | AOD603 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOD603
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD603 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
Standard Product AOD603 is Pb-free (meets ROHS
& Sony 259 specifications). AOD603L is a Green
Product ordering option. AOD603 and AOD603L are
electrically identical.
TO-252
D-PAK
Features
n-channel
p-channel
VDS (V) = 60V
-60V
ID = 12A (VGS=10V) -12A (VGS=-10V)
RDS(ON)
RDS(ON)
< 60mΩ (VGS=10V)
< 115m Ω (VGS =- 10V)
< 85mΩ (VGS=4.5V)
< 150m Ω (VGS = -4.5V)
D2 D1
Top View
Drain Connected to
Tab
G2
S2
G1
S1
n-channel
p-channel
S1 G1 D1/D2 G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
12
12
30
12
23
TC=25°C
Power Dissipation B TC=100°C
PD
20
10
TA=25°C
Power Dissipation A TA=70°C
PDSM
2
1.3
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
Max p-channel
-60
±20
-12
-10
-30
-12
23
37.5
18.8
2.5
1.6
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Case B
Steady-State
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case B
Steady-State
Symbol
RθJA
RθJC
RθJA
RθJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
17.4
50
4
16.7
40
2.5
Max
30
60
7.5
25
50
4
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOD603
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
tA
=
L ⋅ ID
BV − VDD
8
6
4
TA=25°C
2
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
14
12
10
8
6
4
2
0
0
10
1
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
50
TA=25°C
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AOD603.PDF ] | |
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