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IRGP50B60PDPBF の電気的特性と機能

IRGP50B60PDPBFのメーカーはInternational Rectifierです、この部品の機能は「WARP2 SERIES IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP50B60PDPBF
部品説明 WARP2 SERIES IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP50B60PDPBF Datasheet, IRGP50B60PDPBF PDF,ピン配置, 機能
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SMPS IGBT
PD - 95968
IRGP50B60PDPbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead- Free
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61m
ID (FET equivalent) = 50A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
75
42
150
150
50
25
100
±20
370
150
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.34
0.64
–––
40
–––
Units
°C/W
g (oz)
12/1/04
www.irf.com

1 Page





IRGP50B60PDPBF pdf, ピン配列
80
70 Limited by package
60
50
40
30
20
10
0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10
1
10
100 1000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
320
280 VGE = 15V
240
VGE = 12V
VGE = 10V
VGE = 8.0V
200 VGE = 6.0V
160
120
80
40
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
IRGP50B60PDPbF
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
320
280 VGE = 15V
240
VGE = 12V
VGE = 10V
VGE = 8.0V
200 VGE = 6.0V
160
120
80
40
0
0 2 4 6 8 10
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
320
280 VGE = 15V
VGE = 12V
240
VGE = 10V
VGE = 8.0V
VGE = 6.0V
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16 18 20
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3


3Pages


IRGP50B60PDPBF 電子部品, 半導体
IRGP50B60PDPbF
140
VR = 200V
TJ = 125°C
TJ = 25°C
120
100
80 IF = 50A
IF = 25A
IF = 10A
60
40
20
100
di f /dt - (A/µs)
A
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
1400
1200
VR = 200V
TJ = 125°C
TJ = 25°C
1000
800
600
IF = 50A
IF = 25A
IF = 10A
400
200
A
0
100 1000
di f /dt - (A/µs)
Fig. 21 - Typical Stored Charge vs. dif/dt
30
VR = 200V
TJ = 125°C
TJ = 25°C
25
I F = 50A
20
I F = 25A
I F = 10A
15
10
5
A
0
100 1000
di f /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
10000
VR = 200V
TJ = 125°C
TJ = 25°C
1000
I F = 50A
IF = 25A
I F = 10A
100
100
di f /dt - (A/µs)
A
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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部品番号部品説明メーカ
IRGP50B60PDPBF

WARP2 SERIES IGBT

International Rectifier
International Rectifier


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