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HY62LF16404C の電気的特性と機能

HY62LF16404CのメーカーはHynix Semiconductorです、この部品の機能は「256Kx16bit full CMOS SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 HY62LF16404C
部品説明 256Kx16bit full CMOS SRAM
メーカ Hynix Semiconductor
ロゴ Hynix Semiconductor ロゴ 




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HY62LF16404C Datasheet, HY62LF16404C PDF,ピン配置, 機能
www.DataSheet4U.com
HY62LF16404C Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 3.0V Super Low Power FCMOS Slow SRAM
Revision History
Revision No History
00 Initial Draft
01 Part No Change
100ns Part Delete
02 Marking Information add
tBLZ / tOLZ value is changed
Icc1 value is changed
Output Load is redefined
Isb, Isb1, Vdr, Iccdr are redefined
03 Changed Logo
04 Changed Isb1 values
Changed part No Q -> L
Draft Date Remark
Jul.06.2000 Preliminary
Oct.30.2000 Preliminary
Dec.20.2000 Final
Mar.23.2001
Jun.07.2001
Final
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.04 / Jun.01
Hynix Semiconductor

1 Page





HY62LF16404C pdf, ピン配列
HY62LF16404C Series
ORDERING INFORMATION
Part No.
HY62LF16404C-DM(I)
HY62LF16404C-SM(I)
Speed
70/85
70/85
Note 1. Blank : Commercial, I : Industrial
Power
LL-part
SL-part
Temp.
I
I
Package
uBGA
uBGA
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VIN, VOUT
Vcc
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to 3.0
-0.3 to 4.0
40 to 85
-55 to 150
1.0
260 10
Unit
V
V
°C
°C
W
°Csec
Remark
HY62LF16404C-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE /OE /LB /UB
Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
H
X
X
X
X XX
X HH
Deselected
High-Z
High-Z
L
H
H
L
X
X
L
Output Disabled
High-Z
High-Z
LH
DOUT
High-Z
L H L HL
Read
High-Z
DOUT
LL
DOUT
DOUT
LH
DIN High-Z
L L X HL
Write
High-Z
DIN
LL
DIN DIN
Note:
1. H=VIH, L=VIL, X=don't care (VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Power
Standby
Active
Active
Active
Rev.04 / Jun.01
2


3Pages


HY62LF16404C 電子部品, 半導体
TIMING DIAGRAM
READ CYCLE 1 (Note 1,4)
ADDR
/CS
tAA
tACS
tRC
/UB ,/ LB
/OE
Data
Out
High-Z
tBA
tOE
tOLZ(3)
tBLZ(3)
tCLZ(3)
HY62LF16404C Series
tOH
tCHZ(3)
tBHZ(3)
tOHZ(3)
Data Valid
READ CYCLE 2 (Note 1,2,4)
ADDR
Data
Out
tAA
tOH
Previous Data
tRC
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
Data Valid
tOH
Data
Out
tACS
tCLZ(3)
Data Valid
tCHZ(3)
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS and /UB and/or /LB .
2. /OE = VIL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
Rev.04 / Jun.01
5

6 Page



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共有リンク

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部品番号部品説明メーカ
HY62LF16404C

256Kx16bit full CMOS SRAM

Hynix Semiconductor
Hynix Semiconductor
HY62LF16404D

256Kx16bit full CMOS SRAM

Hynix Semiconductor
Hynix Semiconductor


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