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IRF6646 の電気的特性と機能

IRF6646のメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6646
部品説明 DirectFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6646 Datasheet, IRF6646 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 96995A
IRF6646
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
DirectFETPower MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
80V max ±20V max 7.6m@ 10V
Qg tot
Qgd
Vgs(th)
36nC
12nC
3.8V
MN
DirectFETISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MN
Description
The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
80
±20
12
9.6
68
96
230
7.2
Units
V
A
mJ
A
0.05
0.04
ID = 6.2A
0.03
0.02
0.01
0
4
TJ = 25°C
68
TJ = 125°C
10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0
8.0
ID= 7.2A
VDS= 40V
VDS= 16V
6.0
4.0
2.0
0.0
0
Fig 2.
10 20 30 40
QG Total Gate Charge (nC)
Typical Total Gate Charge vs. Gate-to-Source
Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 8.8mH, RG = 25, IAS = 7.2A.
1
06/08/05

1 Page





IRF6646 pdf, ピン配列
IRF6646
Absolute Maximum Ratings
Parameter
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
100
D = 0.50
10
1
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.678449
17.29903
τi (sec)
0.00086
0.57756
τ3 τ3
τ4 τ4
17.56647 8.94
9.470128 106
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling , mounting pad.
Rθ is measured at TJ of approximately 90°C.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3


3Pages


IRF6646 電子部品, 半導体
IRF6646
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16b. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16c. Unclamped Inductive Waveforms
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com

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