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MT5C6405 の電気的特性と機能

MT5C6405のメーカーはASIです、この部品の機能は「16K x 4 SRAM SRAM MEMORY ARRAY」です。


製品の詳細 ( Datasheet PDF )

部品番号 MT5C6405
部品説明 16K x 4 SRAM SRAM MEMORY ARRAY
メーカ ASI
ロゴ ASI ロゴ 




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MT5C6405 Datasheet, MT5C6405 PDF,ピン配置, 機能
www.DataSheet4U.com
Austin Semiconductor, Inc.
SRAM
MT5C6405
16K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• MIL-STD-883
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C No. 106
E C No. 204
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 35ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A5 1
A6 2
A7 3
A8 4
A9 5
A10 6
A11 7
A12 8
A13 9
CE\ 10
OE\ 11
Vss 12
24 Vcc
23 A4
22 A3
21 A2
20 A1
19 A0
18 NC
17 DQ4
16 DQ3
15 DQ2
14 DQ1
13 WE\
28-Pin LCC (EC)
A6 4
A7 5
A8 6
A9 7
A10 8
A11 9
A12 10
A13 11
CE\ 12
3 2 1 28 27
26 NC
25 A4
24 A3
23 A2
22 A1
21 A0
20 DQ4
19 DQ3
18 DQ2
13 14 15 16 17
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
MT5C6405
Rev. 2.0 5/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

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MT5C6405 pdf, ピン配列
Austin Semiconductor, Inc.
SRAM
MT5C6405
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1
Storage Temperature…...................................-65oC to +150oC
Power Dissipation.................................................................1W
Max Junction Temperature..................................................+175°C
Lead Temperature (soldering 10 seconds)........................+260oC
Short Circuit Output Current...........................................20mA
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
1 All voltage referenced to Vss.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
CONDITIONS
SYM MIN
MAX UNITS NOTES
Input High (Logic 1) Voltage
VIH 2.2 Vcc+0.5V V
1
Input Low (Logic 0) Voltage
VIL -0.5
0.8
V 1, 2
Input Leakage Current
0V < VIN < VCC
ILI -10
10 µA
Output Leakage Current
Outputs Disabled
0V < VOUT < VCC
ILO -10
10 µA
Output High Voltage
IOH = -4.0mA
VOH 2.4
V1
Output Low Voltage
IOL = 8.0mA
VOL
0.4 V 1
PARAMETER
Power Supply
Current: Operating
CONDITIONS
CE\ < VIL; VCC = MAX
Output Open
SYM -12
MAX
-15 -20 -25
-35 UNITS NOTES
Icc 140 125 110 100 90 mA
3
Power Supply
Current: Standby
CE\ > VIH; VCC = MAX
f = 0 Hz
ISBT1 50 45 40 35 30 mA
CE\ > (VCC -0.2); VCC = MAX
All Other Inputs < 0.2V
ISBC2 25 25 25 25 25 mA
or > (VCC - 0.2V), f = 0 Hz
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
CONDITIONS
TA = 25oC, f = 1MHz
Vcc = 5V
SYM
CI
CO
MAX
8
10
UNITS NOTES
pF 4
pF 4
MT5C6405
Rev. 2.0 5/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3


3Pages


MT5C6405 電子部品, 半導体
Austin Semiconductor, Inc.
SRAM
MT5C6405
ADDRESS
DQ
READ CYCLE NO. 1 8, 9
ttOHH
PREVIOUS DATA VALID
ttAAAA
ttRRCC
VALID
DATA VALID
CE\
OE\
DQ HIGH-Z
Icc
READ CYCLE NO. 2 7, 8, 10
ttRRCC
ttAAOOEE
ttLLZOOEE
ttLLZZCCEE
tAtACCEE
ttPUU
ttHHZOOEE
DATA VALID
ttHHZCCEE
ttPPDD
MT5C6405
Rev. 2.0 5/01
111222333444DON’T CARE
1111222233334444 UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6

6 Page



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共有リンク

Link :


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Austin Semiconductor
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MT5C6404

16K x 4 SRAM SRAM MEMORY ARRAY

ASI
ASI
MT5C6405

16K x 4 SRAM SRAM MEMORY ARRAY

ASI
ASI


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