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BSO315C の電気的特性と機能

BSO315CのメーカーはInfineon Technologiesです、この部品の機能は「SIPMOS Small-Signal-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BSO315C
部品説明 SIPMOS Small-Signal-Transistor
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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BSO315C Datasheet, BSO315C PDF,ピン配置, 機能
www.DataSheet4U.com
Preliminary data
BSO 315 C
SIPMOS® Small-Signal-Transistor
Features
Dual N- and P -Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
VDS
RDS(on)
ID
N
30
0.11
3.4
P
-30
0.25
V
-2.3 A
Type
BSO 315 C
Package
SO 8
Ordering Code
Q67041-S4014
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25
ID = -1.8 A, VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 2.9 A, VDS = 24 , di/dt = 200 A/µs
IS = -1.8 A, VDS = -24 , di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3.4
2.7
11.6
-2.3
-1.8
-7.2
25 -
- 35
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-09-22

1 Page





BSO315C pdf, ピン配列
Preliminary data
BSO 315 C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 2.9 A
VVDS2 * ID * RDS(on)max, ID = -1.8 A
gfs
N
P
2.2 4.5
1.6 3.2
S
-
-
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 0 V, VDS = -25 V, f = 1 MHz
Ciss
N
P
pF
- 200 250
- 200 250
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 0 V, VDS = -25 V, f = 1 MHz
Coss
N
P
- 93 116
- 113 140
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 0 V, VDS = -25 V, f = 1 MHz
Crss
N
P
- 50 63
- 38 48
Turn-on delay time
VDD = 15 V, VGS = 4.5 V, ID = 2.9 A, RG = 33
VDD = -15 V, VGS = -4.5 V, ID = -1.8 A, RG = 24
td(on)
N
P
ns
- 15 22
- 22 33
Rise time
VDD = 15 V, VGS = 4.5 V, ID = 2.9 A, RG = 33
VDD = -15 V, VGS = -4.5 V, ID = -1.8 A, RG = 24
tr
N
P
- 96 144
- 71 107
Turn-off delay time
VDD = 15 V, VGS = 4.5 V, ID = 2.9 A, RG = 33
VDD = -15 V, VGS = -4.5 V, ID = -1.8 A, RG = 24
td(off)
N
P
- 13 20
- 56 84
Fall time
VDD = 15 V, VGS = 4.5 V, ID = 2.9 A, RG = 33
VDD = -15 V, VGS = -4.5 V, ID = -1.8 A, RG = 24
tf
N
P
- 20 30
- 61 90
Page 3
1999-09-22


3Pages


BSO315C 電子部品, 半導体
Preliminary data
BSO 315 C
Safe operating area (N-Ch.)
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 2 BSO 315 C
A
10 1
/ID
= V DS
R DS(on)
tp = 100.0µs
1 ms
Safe operating area (P-Ch.)
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 1 BSO 315 C
tp = 460.0µs
A 1 ms
-10 0
10 ms
10 0
10 ms
10 -1
-10 -1
DC
DC
10
-2
10
-1
10 0
10 1 V 10 2
VDS
Transient thermal impedance (N-Ch.)
ZthJC = f(tp)
parameter : D = tp/T
10 2 BSO 315 C
K/W
-10
-2
-10
-1
-10 0
-10 1
V -10 2
VDS
Transient thermal impedance (P-Ch.)
ZthJC = f(tp)
parameter : D = tp/T
10 2 BSO 315 C
K/W
10 1
10 1
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s 10 4
tp
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s
tp
10 4
Page 6
1999-09-22

6 Page



ページ 合計 : 13 ページ
 
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共有リンク

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部品番号部品説明メーカ
BSO315C

SIPMOS Small-Signal-Transistor

Infineon Technologies
Infineon Technologies


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