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12A02SP の電気的特性と機能

12A02SPのメーカーはSanyo Semicon Deviceです、この部品の機能は「Low-Frequency General-Purpose Amplifier Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 12A02SP
部品説明 Low-Frequency General-Purpose Amplifier Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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12A02SP Datasheet, 12A02SP PDF,ピン配置, 機能
www.DataSheet4U.com
Ordering number : ENN7485
12A02SP
PNP Epitaxial Planar Silicon Transistors
12A02SP
Low-Frequency
General-Purpose Amplifier Applications
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive, muting circuit.
Package Dimensions
unit : mm
2033A
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE (sat) typ.=285m[IC=1A, IB=50mA].
Small ON-resistance (Ron).
[12A02SP]
4.0
0.4
0.5
2.2
0.4
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Marking : XK
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB= --12V, IE=0
VEB= --4V, IC=0
VCE= --2V, IC= --10mA
VCE= --2V, IC= --50mA
123
1.3 1.3
3.0
3.8nom
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
--15
--12
--5
--1
--2
400
150
--55 to +150
Unit
V
V
V
A
A
mW
°C
°C
min
300
Ratings
typ
max
Unit
--100 nA
--100 nA
700
450 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2203 TS IM TA-100603 No.7485-1/4

1 Page





12A02SP pdf, ピン配列
--1000
7
5
3
2
--100
7
5
3
2
VCE(sat) -- IC
25°C
Ta=75°C
--25°C
12A02SP
IC / IB=50
--10
7
5
3
2
--1.0
7
5
3
2
VBE(sat) -- IC
IC / IB=20
25°C
Ta= --25°C
75°C
--10
--1.0
3
2
23
5 7 --10 2 3 5 7 --100 2
Collector Current, IC -- mA
Cob -- VCB
3 5 7--1000
IT05098
f=1MHz
10
7
5
3
2
--0.1
--1.0
1000
7
5
23
5 7 --10 2 3 5 7 --100 2 3
Collector Current, IC -- mA
fT -- IC
5 7--1000
IT05099
VCE= --2V
3
2
100
7
5
3
2
1.0
--1.0
23
5 7 --10
Collector-to-Base Voltage, VCB -- V
Ron -- IB
10
7 f=1MHz
1k
IN
5 1k
23
IT05100
OUT
3 IB
2
1.0
7
5
3
2
10
--1.0
500
23
5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA
IT05101
PC -- Ta
400
300
200
100
0.1
--0.1
23
5 7 --1.0
23
Base Current, IB -- mA
5 7 --10
IT06091
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05105
No.7485-3/4


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共有リンク

Link :


部品番号部品説明メーカ
12A02SP

Low-Frequency General-Purpose Amplifier Applications

Sanyo Semicon Device
Sanyo Semicon Device
12A02SS

Low-Frequency General-Purpose Amplifier Applications

Sanyo Semicon Device
Sanyo Semicon Device


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