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STTH120L04TV1 の電気的特性と機能

STTH120L04TV1のメーカーはST Microelectronicsです、この部品の機能は「Ultrafast High Voltage Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 STTH120L04TV1
部品説明 Ultrafast High Voltage Rectifier
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STTH120L04TV1 Datasheet, STTH120L04TV1 PDF,ピン配置, 機能
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STTH120L04TV1
Ultrafast high voltage rectifier
Mian product characteristics
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (max)
2 x 60 A
400 V
150° C
0.83 V
50 ns
Features and benefits
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Package insulation voltage: 2500 VRMS
A1 K1
A2 K2
K1
A1
K2
A2
ISOTOP
STTH120L04TV1
Description
The STTH120L04TV1 uses ST 400 V technology
and is specially suited for use in switching power
supplies, welding equipment, and industrial
applications, as an output rectification diode.
Order codes
Part number
STTH120L04TV1
Marking
STTH120L04TV1
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Tc = 115° C δ = 0.5
tp = 10 ms sinusoidal
Maximum operating junction temperature
Per diode
Value
400
120
60
600
-55 to + 150
150
Unit
V
A
A
A
°C
°C
August 2006
Rev 1
1/7
www.st.com
7

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STTH120L04TV1 pdf, ピン配列
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STTH120L04TV1
Characteristics
Figure 1. Conduction losses versus
Figure 2. Forward voltage drop versus
average forward current (per diode)
forward current (per diode)
P (W)
80
70
60
50
40
30
20
10
0
0 10
d=0.05
d=0.1
d=0.2
I F(AV) (A)
20 30 40 50
d=0.5
d=1
T
60 70 80
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
V FM (V)
0.2 0.4
TJ=150°C
(Maximum values)
TJ=150°C
(Typical values)
0.6 0.8
1.0
TJ=25°C
(Maximum values)
1.2 1.4 1.6
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
Z th(j-c)/R t h( j-c)
1.0
0.9 Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
t P (s)
1.E-01
1.E+00
1.E+01
IRM(A)
45
40
IF=IF(AV)
VR=200V
TJ=125°C
35
30
25
20
15
10
5
dIF /dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus
dIF/dt (typical values, per diode)
trr (ns)
250
225
200
IF=IF(AV)
VR=200V
TJ=125°C
175
150
125
100
75
50
25
0
dIF /dt(A/µs)
0 50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
3000
2500
Qrr (nC)
IF=IF(AV)
VR=200V
TJ=125°C
2000
1500
1000
500
0
0
dIF /dt(A/µs)
100 200 300 400 500
3/7


3Pages


STTH120L04TV1 電子部品, 半導体
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Ordering information
3 Ordering information
STTH120L04TV1
Ordering type
Marking
Package
Weight
Base qty Delivery mode
STTH120L04TV1 STTH120L04TV1
ISOTOP
27 g
(without screws)
10
(with screws)
Tube
4 Revision history
Date
11-Aug-2006
Revision
1
First issue
Description of Changes
6/7

6 Page



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部品番号部品説明メーカ
STTH120L04TV1

Ultrafast High Voltage Rectifier

ST Microelectronics
ST Microelectronics


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