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PDF HYR166449G-845 Data sheet ( Hoja de datos )
| Número de pieza | HYR166449G-845 | |
| Descripción | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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HYR16xx49G
64MB & 128MB Rambus RIMM Modules
Direct RDRAM RIMM Modules
(with 288 Mbit RDRAMs)
Overview
The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem
suitable for use in a broad range of applications including computer memory, personal computers,
workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™)
devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while
using conventional system and board design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed, memory transactions. The separate control and data buses with independent
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports
up to four simultaneous transactions per device.
Form Factor
These family of 64MByte and 128MByte Rambus RIMM modules are offered in a 184-pad 1 mm
edge connector pad pitch form factor suitable for 184 contact RIMM connectors. The RIMM module
is suitable for desktop and other system applications. The next figure shows an eight device
Rambus RIMM module without heat spreader.
Features
• 64 MByte and 128 MByte non-ECC versions • Gold plated edge connector pad contacts
• High speed 800 & 600 MHz RDRAM storage • Serial Presence Detect (SPD) support
• 184 edge connector pads with 1 mm pad
spacing
• Maximum module PCB size:
133.5 mm × 31.75 mm × 1.37 mm
(5.25” × 1.25” × 0.05”)
• Each RDRAM has 32 banks, for a total of 128
,
or 64 banks on each 128 MB or 64 MB
module respectively.
• Operates from a 2.5 V supply (± 5%)
• Low power and powerdown self refresh
modes
• Separate Row and Column buses for higher
efficiency
INFINEON Technologies
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HYR16xx49G
64MB & 128MB Rambus RIMM Modules
Module Connector Pad Description
Signal
Module Connector Pads
GND
A1, A3, A5, A7, A9, A11,
A13, A15, A17, A19, A21,
A23, A25, A27, A29, A31,
A33, A39, A52, A60, A62,
A64, A66, A68, A70, A72,
A74, A76, A78, A80, A82,
A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11,
B13, B15, B17, B19, B21,
B23, B25, B27, B29, B31,
B33, B39, B52, B60, B62,
B64, B66, B68, B70, B72,
B74, B76, B78, B80, B82,
B84, B86, B88, B90, B92
LCFM
B10
I/O
–
I
LCFMN
B12
I
LCMD
B34
I
LCOL4 …
LCOL0
A20, B20, A22, B22, A24 I
LCTM
A14
I
LCTMN
A12
I
LDQA8 …
LDQA0
A2, B2, A4, B4, A6, B6,
A8, B8, A10
I/O
Type
–
Description
Ground reference for RDRAM core
and interface. 72 PCB connector
pads.
RSL
RSL
VCMOS
RSL
RSL
RSL
RSL
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Positive polarity.
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Negative polarity.
Serial Command used to read from
and write to the control registers.
Also used for power management.
Column bus. 5-bit bus containing
control and address information for
column accesses.
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Positive polarity.
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Negative polarity.
Data bus A. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
LDQA8 is non-functional on
modules with x16 RDRAM devices.
INFINEON Technologies
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HYR16xx49G
64MB & 128MB Rambus RIMM Modules
AC Electrical Specifications for RIMM Modules
Symbo RIMM Module Capacity:
l No. of 288 Mbit RDRAMs:
Unit
TPD
VA/VIN
VXF/VIN
VXB/VIN
RDC
Parameter and Conditions for -800, 711& -600 max. max.
RIMM Modules
Propagation Delay, all RSL signals -800
1.28 1.28 ns
Propagation Delay, all RSL signals -600
1.28 1.28 ns
Attenuation Limit -800
12 12 %
Attenuation Limit -600
10.5 10.5 %
Forward crosstalk coefficient (300 ps input rise 2 2 %
time @ 20% - 80%) -800, -600
Backward crosstalk coefficient (300 ps input rise 1.5 1.5 %
time @ 20%-80%) -800, -600
DC Resistance Limit -800, -600
0.6 0.6 Ω
INFINEON Technologies
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet HYR166449G-845.PDF ] | |
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